Semiconductor device and method of manufacturing the same, and electronic apparatus
AssigneeSony Corporation
InventorsTaku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
Life of this patent
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Abstract
A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.
Claims18
A semiconductor device comprising:
- a first semiconductor wafer having a light incident side and including a pixel section, the pixel section including a photodiode and at least one of a transfer transistor, a reset transistor, or an amplification transistor;
- a second semiconductor wafer including a logic circuit, the logic circuit including a signal processing unit, wherein the first semiconductor wafer and the second semiconductor wafer are bonded to each other;
- a first multi-wiring layer formed at a side opposite to the light incident side of the first semiconductor wafer, wherein the first multi-wiring layer is connected to the pixel section;
- a second multi-wiring layer formed at a first side of the second semiconductor wafer, wherein the side opposite to the light incident side of the first semiconductor wafer and the first side of the second semiconductor wafer face each other;
- a connection conductor extending from the light incident side of the first semiconductor wafer to the second multi-wiring layer through the first semiconductor wafer in a peripheral section other than the pixel section;
- and
- an insulating layer disposed on a top surface of the connection conductor,
- wherein,
- the connection conductor extends to the second multi-wiring layer by penetrating the first semiconductor wafer, and
- the connection conductor has a first connection point connected to a wiring in the first multi-wiring layer and a second connection point connected to a part of the logic circuit.
An electronic apparatus, comprising:
- an imaging device, including:
- a first semiconductor wafer having a light incident side and including a pixel section, the pixel section including a photodiode and at least one of a transfer transistor, a reset transistor, or an amplification transistor;
- a second semiconductor wafer including a logic circuit, the logic circuit including a signal processing unit, wherein the first semiconductor wafer and the second semiconductor wafer are bonded to each other;
- a first multi-wiring layer formed at a side opposite to the light incident side of the first semiconductor wafer, wherein the first multi-wiring layer is connected to the pixel section;
- a second multi-wiring layer formed at a first side of the second semiconductor wafer, wherein the side opposite to the light incident side of the first semiconductor wafer and the first side of the second semiconductor wafer face each other;
- a connection conductor extending from the light incident side of the first semiconductor wafer to the second multi-wiring layer through the first semiconductor wafer in a peripheral section other than the pixel section;
- an insulating layer disposed on a top surface of the connection conductor,
- wherein,
- the connection conductor extends to the second multi-wiring layer by penetrating the first semiconductor wafer, and
- the connection conductor has a first connection point connected to a wiring in the first multi-wiring layer and a second connection point connected to a part of the logic circuit;
- an optical system that introduces incident light into the photodiode;
- and
- a signal processing circuit that processes an output signal from the imaging device.
Dependencies are inferred from the claim text.