Temperature compensation in a semiconductor micromechanical resonator via charge carrier depletion
AssigneeGeorgia Tech Research Corporation
InventorsFarrokh Ayazi, Ashwin Samarao
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Abstract
A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.
Claims18
A semiconductor resonator, comprising:
- a resonator body having a thickness extending between a first end and a second end;
- and
- a mechanism for reducing a temperature coefficient of frequency of the resonator comprising at least one pn-junction along the thickness of the resonator body forming a free charge carrier depletion region configured for minimizing a flow of free charge carriers therethrough.
A semiconductor resonator, comprising:
- a resonator body having a thickness extending between a first end and a second end;
- a plurality of at least three pn-junction layers along the thickness of the resonator body forming a plurality of at least three free charge carrier depletion regions.
A method of compensating a temperature coefficient of a semiconductor resonator, comprising:
- A) providing a resonator body having a thickness extending between first and second ends thereof;
- B) creating a pry-junction based free charge carrier depletion region along the thickness of the resonator body of the resonator.
Dependencies are inferred from the claim text.