Semiconductor device and method of manufacturing semiconductor device
AssigneeNichia Corporation
InventorsAtsuo Michiue, Yasuhiro Kawata
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Abstract
A semiconductor device includes a semiconductor layer stacked on a substrate, a stripe-shaped ridge formed on a surface of the semiconductor layer, and electrode formed on an upper surface of the ridge and a protective film disposed on each side of the ridge. The electrode includes a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge. The protective film covers a region from a side surface of the ridge to the sloped surface of the sloped portion of the electrode.
Claims15
A semiconductor device comprising:
- a semiconductor layer stacked on a substrate, the semiconductor layer including an optical waveguide region;
- a stripe-shaped ridge formed on a surface of the semiconductor layer;
- a first electrode formed on an upper surface of the ridge, and including a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge;
- a protective film covering each side surface of the ridge and the sloped surface portions of the first electrode;
- and
- a second electrode electrically connected to the first electrode, and formed over the first electrode and the protective film so that an upper surface of a part of the second electrode is positioned lower than the upper surface of the ridge, wherein
- an inclination angle of the sloped surface of the first electrode is smaller than an inclination angle of a side surface of the ridge.
A semiconductor device comprising:
- a semiconductor layer stacked on a substrate, the semiconductor layer including an optical waveguide region;
- a stripe-shaped ridge formed on a surface of the semiconductor layer;
- a first electrode formed on an upper surface of the ridge, and including a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge;
- a protective film covering each side surface of the ridge and the sloped surface portions of the first electrode;
- and
- a second electrode electrically connected to the first electrode, and formed over the first electrode and the protective film so that an upper surface of a part of the second electrode is positioned lower than the upper surface of the ridge, wherein
- each of the sloped portions of the first electrode has a height as measured from a top surface of the ridge decreasing from an end of the flat portion toward the side surface of the ridge.
Dependencies are inferred from the claim text.