VCSEL with integrated electrically modulated intra-cavity graphene absorber
AssigneeFinisar Corporation
InventorsLuke A. Graham, Ralph H. Johnson, James K. Guenter
Life of this patent
Estimating the term…
Abstract
A VCSEL can include a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region. The VCSEL can also include a graphene electrode electronically coupled with at least one graphene region. The VCSEL can also include a contact region adjacent with at least one dielectric region. The VCSEL can also include a contact electrode electronically coupled with the contact region. The VCSEL can also include a base electrode electronically coupled with a base of a semiconductor region of the VCSEL. The graphene intra-cavity absorber can include at least two graphene regions sandwiching at least one dielectric region therebetween.
Claims20
A VCSEL comprising:
- a bottom electrode;
- a bottom mirror stack electrically coupled to and over the bottom electrode;
- an active region having a lasing region over the bottom mirror stack;
- a top mirror stack over the active region;
- an oxide aperture over the active region;
- a contact region over the top mirror stack;
- a contact electrode electrically coupled with the contact region;
- a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region, the graphene intra-cavity absorber including a bottom graphene region over the contact region, a dielectric region over the contact region, and a top graphene region over the dielectric region;
- a graphene electrode electronically coupled with the top graphene region;
- and
- a dielectric mirror over the graphene region.
A method of manufacturing a VCSEL, the method comprising
- forming a VCSEL semiconductor region having a lasing region, and a contact region over the lasing region;
- forming a dielectric region over the contact region;
- forming a graphene region over the dielectric region such that the dielectric region isolates the graphene region from the lasing region;
- forming a graphene electrode so as to be electrically coupled with the graphene region;
- forming at least one AlAs region and at least one GaAs region between the graphene region and the VCSEL semiconductor region;
- and
- oxidizing at least one of the AlAs regions to be an insulating aluminum oxide region.
A VCSEL comprising:
- a bottom electrode;
- a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode;
- an active region having a lasing region over the bottom semiconductor mirror stack;
- a top semiconductor mirror stack over the active region;
- an oxide aperture over the active region;
- a contact region over the top semiconductor mirror stack;
- an annular contact electrode electrically coupled with the contact region;
- an electrically insulating region over the contact region;
- a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region, the graphene intra-cavity absorber including a bottom graphene region over the contact region with the electrically insulating region therebetween, a bottom graphene electrode electronically coupled with the bottom graphene region;
- a dielectric region over the contact region and within an aperture of the annular contact electrode, and a top graphene region over the dielectric region;
- a top graphene electrode electronically coupled with the top graphene region;
- and
- a dielectric mirror over the graphene region.
Dependencies are inferred from the claim text.