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US 9,318,871 B2Granted
Semiconductor laser device and manufacturing method thereof, and submount manufacturing method
AssigneeNichia Corporation
InventorsHiroki Sakata, Hiroaki Yuto, Eiichiro Okahisa, Kazuma Kozuru
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Abstract
A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
Claims9
A semiconductor laser device, comprising:
- an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface;
- a conductive base provided on a side of the first surface of the single crystal SiC;
- a semiconductor laser element provided on a side of the second surface of the single crystal SiC;
- and
- an insulating member disposed in the micropipes, wherein the insulating member is also disposed on the first surface and the second surface of the single crystal SiC in addition to inside the micropipes, and an amount of the insulating member that is disposed on the side of the second surface of the single crystal SiC is smaller than an amount of the insulating member that is disposed on the side of the first surface of the single crystal SiC.
2 more elements
A semiconductor laser device comprising:
- an insulating single crystal SiC including a first surface, a second surface, and micropipes having openings in the first surface and the second surface;
- a conductive base provided on the side of the first surface of the single crystal SiC;
- a semiconductor laser element provided on the side of the second surface of the single crystal SiC;
- a first conductive member comprising a first conductive bonding member provided on the first surface of the single crystal SiC;
- and
- a second conductive member comprising a second conductive bonding member provided on the second surface of the single crystal SiC and that is insulated from the first conductive member,
- wherein a part of at least one of the first conductive member and the second conductive member penetrates into the micropipes, and
- wherein the micropipes are crystal defects in the single crystal SiC.
5 more elements
Dependencies are inferred from the claim text.