Variable resistance memory device and methods of forming the same

A method of fabricating a variable resistance memory device, comprising:

• alternatingly stacking a plurality of sacrificial layers and a plurality of insulating layers on a layer;
• patterning the insulating layers and the sacrificial layers to form a vertical electrode hole;
• forming a first barrier layer on a sidewall of the vertical electrode hole;
• forming a switching layer on a sidewall of the first barrier layer;
• forming a vertical electrode in the vertical electrode hole, the vertical electrode being connected to the layer;
• patterning the insulating layers and the sacrificial layers to form a groove spaced apart from the vertical electrode hole;
• removing the sacrificial layers through the groove to form an empty space;
• conformally forming a second barrier layer in the empty space;
• and
• filling the empty space with a horizontal electrode layer.