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US 9,318,699 B2Granted
Resistive memory cell structures and methods
AssigneeMicron Technology, Inc.
InventorsFabio Pellizzer, Ferdinando Bedeschi
Life of this patent
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Abstract
Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material.
Claims7
A method of forming an array of resistive memory cells, the method comprising:
- forming a first number of resistive memory cells in a first region of the array and a second number of resistive memory cells in a second region of the array;
- and
- modifying an electrothermal property of a resistance variable material in at least one of the first region of the array and the second region of the array,
- wherein modifying the electrothermal property of the resistance variable material in the at least one of the first and second regions includes thermal activation to modify the electrothermal properties of the resistance variable material in the first and second regions of the array.
1 more element
Dependencies are inferred from the claim text.