Methods of detecting an etch by-product and methods of manufacturing a magnetoresistive random access memory device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Hye Bae, Won-Jun Lee, Sung-Yoon Chung, Taek-Dong Chung
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Abstract
In a method of detecting an etch by-product, the method including forming a magnetic layer including palladium (Pd) on a substrate; etching the magnetic layer to form a magnetic layer pattern; depositing a mixture including an alkyl bromide compound on a surface of the magnetic layer pattern; and measuring a current difference between the substrate and the mixture to detect an etch by-product on the surface of the magnetic layer pattern.
Claims12
A method of manufacturing a magnetoresistive random access memory (MRAM) device, the method comprising:
- forming a magnetic tunnel junction (MTJ) structure including palladium (Pd) on a substrate;
- depositing a mixture including an alkyl bromide compound on a surface of the MTJ structure;
- measuring a current difference between the substrate and the mixture to detect a conductive polymer including palladium (Pd);
- and
- cleaning the MTJ structure.
A method of manufacturing a magnetoresistive random access memory device, the method comprising:
- forming a magnetic layer pattern on a substrate;
- depositing a mixture including an alkyl bromide compound on the magnetic layer pattern;
- and
- measuring a current difference between the substrate and the mixture,
- wherein the magnetic layer pattern is not damaged by the depositing or measuring steps.
Dependencies are inferred from the claim text.