Self-aligned top contact for MRAM fabrication

A Magnetoresistive random-access memory (MRAM) device comprising:

• a magnetic tunnel junction (MTJ) formed in a common interlayer metal dielectric (IMD) layer with a logic element;
• and
• a low dielectric constant (K) etch stop layer formed selectively over the MTJ, but not the logic element, wherein a cap layer formed below the common IMD layer and the common IMD layer are configured to be etched by a first chemistry to expose a bottom metal line of the logic element, wherein the low K etch stop layer is configured to be etched by a second chemistry but not affected by the first chemistry used to etch the cap layer and the common IMD layer, and wherein a self-aligned top metal line contact for the MTJ is formed in an opening etched in the low K etch stop layer using the second chemistry.

A Magnetoresistive random-access memory (MRAM) device comprising:

• a magnetic tunnel junction (MTJ) formed in a common interlayer metal dielectric (IMD) layer with a logic element;
• and
• means for selectively preventing etching over the MTJ based on a first chemistry used for etching the common IMD layer, wherein a cap layer formed below the common IMD layer and the common IMD layer are configured to be etched by a first chemistry to expose a bottom metal line of the logic element, wherein the means is responsive to etching based on a second chemistry but not affected by the first chemistry used to etch the cap layer and the common IMD layer, and wherein a self-aligned top metal line contact for the MTJ is formed in an opening etched in the means, using the second chemistry.