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US 9,318,694 B2Granted
Methods of forming a magnetic random access memory etch spacer and structures formed thereby
AssigneeIntel Corporation
InventorsDaniel Lamborn, Oleg Golonzka, Christopher Wiegand
Life of this patent
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Abstract
Methods of forming a memory device structure are described. Those methods may include forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, and then forming a highly selective material on the non-conductive spacer material of the magnetic tunnel junction prior to etching a bottom electrode of the magnetic tunnel junction.
Claims24
A method of forming a memory device structure comprising:
- forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, wherein a dielectric material is disposed between the top electrode and a bottom electrode of the magnetic tunnel junction structure;
- forming a highly selective material on the non-conductive spacer material;
- and
- etching the bottom electrode, wherein a portion of the bottom electrode is re-deposited on the highly selective material.
1 more element
A method of forming a MRAM device, comprising:
- forming a highly selective material on an insulator spacer material, wherein the insulator spacer material is disposed on sidewalls of a top electrode of a magnetic tunnel junction device and on a sidewall and top portion of a hardmask material, wherein the hardmask material is disposed on a top portion of the top electrode;
- and
- etching a bottom electrode disposed under the top electrode to expose the hardmask material, wherein the insulator spacer material is not removed from the sidewall of the top electrode wherein at least one of the top electrode or the bottom electrode comprises a ferromagnetic material.
A memory device structure comprising:
- a non-conductive spacer material disposed on a sidewall of top electrode of a magnetic tunnel junction structure, wherein a dielectric material is disposed between the top electrode and a bottom electrode of the magnetic tunnel junction structure wherein the non-conductive spacer material is laterally adjacent to the dielectric material and on a top surface of the bottom electrode but not adjacent to sidewalls of the bottom electrode;
- and
- a highly selective material disposed on the non-conductive spacer material disposed on the top surface of the bottom electrode.
A method of forming a memory device structure comprising:
- forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, wherein a dielectric material is disposed between the top electrode and a bottom electrode of the magnetic tunnel junction structure;
- forming a highly selective material on the non-conductive spacer material;
- and
- etching the bottom electrode, wherein the top and bottom electrodes comprise a ferromagnetic material.
1 more element
Dependencies are inferred from the claim text.