Semiconductor light emitting device and method for manufacturing the same

A semiconductor light emitting device comprising:

• a first semiconductor layer of a first conductivity type;
• a first electrode layer including a metal portion having a plurality of opening portions, the metal portion having a thickness of not less than 10 nanometers and not more than 50 nanometers along a direction from the first semiconductor layer toward the first electrode layer, the plurality of opening portions penetrating the metal portion along the direction, each of the opening portions having an equivalent circle diameter of each shape of the opening portions when viewed along the direction, the equivalent circle diameter being not less than 10 nanometers and not more than 5 micrometers;
• alight emitting layer provided between the first semiconductor layer and first electrode layer;
• a second semiconductor layer of a second conductivity type provided between the light emitting layer and the first electrode layer;
• a third semiconductor layer of the second conductivity type provided between the second semiconductor layer and the first electrode layer;
• and
• a second electrode layer connected to the first semiconductor layer,
• the equivalent circle diameter of each respective of the opening portions being equal to 2×(Area/π)1/2, the Area being an area of the respective opening portion,
• wherein an interface between the first electrode layer and the third semiconductor layer includes a dopant, and
• wherein the first electrode layer is made of at least one metal or an alloy selected from the group consisting of Au, Ag, Al, Zn, Zr, Pt, Rh, Ni, Pd, Cu, Sn, C, Mg, Cr, Te, Se and Ti.