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US 9,318,660 B2Granted
Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-soo Park, Moon-sang Lee
Life of this patent
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Abstract
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
Claims14
A nitride semiconductor substrate, comprising:
- a plurality of seeds formed of a first nitride semiconductor;
- a plurality of nitride semiconductor dots on the plurality of seeds, the plurality of nitride semiconductor dots having an average size of less than or equal to about 0.8 μm, the nitride semiconductor dots including a second nitride semiconductor that is a different type of material than a material of the first nitride semiconductor;
- and
- a nitride semiconductor layer on the nitride semiconductor dots, wherein
- the plurality of seeds are spaced apart from each other,
- the first nitride semiconductor is AlN,
- the second nitride semiconductor is GaN,
- an average size of the seeds is in a range from about 10 nm to about 100 nm,
- an average size of two or more of the nitride semiconductor dots is about 0.4 μm to about 0.8 μm, and
- the nitride semiconductor layer is formed of GaN.
7 more elements
A nitride semiconductor substrate, comprising:
- a seed layer including a plurality of AlN seeds the plurality of seeds being spaced apart from each other, an average size of the seeds being in a range of about 10 nm to about 100 nm;
- a plurality of nitride semiconductor dots on the seed layer, the plurality of nitride semiconductor dots having an average size of less than or equal to about 0.8 μm, the nitride semiconductor dots being formed of GaN;
- and
- a nitride semiconductor layer on the nitride semiconductor dots, the nitride semiconductor layer being formed of GaN.
1 more element
A nitride semiconductor substrate, comprising:
- a plurality of nitride semiconductor dots,
- the plurality of nitride semiconductor dots having an average size of less than or equal to about 0.8 μm,
- the nitride semiconductor dots including first parts formed of AlN and second parts formed of GaN, the first parts being spaced apart from each other;
- and
- a nitride semiconductor layer on the nitride semiconductor dots, the nitride semiconductor layer being formed of GaN.
2 more elements
Dependencies are inferred from the claim text.