Nitride semiconductor light emitting element having light emitting layer including INxGa1-xN well layer and LED system

A nitride semiconductor light emitting element comprising a light emitting layer, wherein:

• the light emitting layer includes an InxGa1-xN well layer 0<x≦1, having a principal surface that is an m-plane;
• a depth profile of an In composition ratio x in the InxGa1-xN well layer has a plurality of peaks;
• values of the In composition ratios x at the respective plurality of peaks are different from one another;
• a temperature coefficient of a wavelength of light generated in the light emitting layer is zero at any one of temperatures from 233 K to 393 K;
• and
• a difference between a shorter one of the wavelength at 233 K and the wavelength at 393 K, and the wavelength at a temperature at which the temperature coefficient is zero is 5 nm or less.

A nitride semiconductor light emitting element comprising a light emitting layer, wherein:

• the light layer includes an InxGa1-xN well layer, where 0<x≦1, having a principal surface that is an m-plane;
• a depth profile of an In composition ratio x in the InxGa1-xN well layer has a plurality of peaks;
• values of the In composition ratios x at the respective plurality of peaks are different from one another;
• the nitride semiconductor light emitting element further comprises a p-type layer and an n-type layer that are provided on the principal surface side and a rear surface side, respectively, of the light emitting layer;
• the plurality of peaks include three or more peaks, and the values of the In composition ratios x at the three or more peaks become smaller or larger in a direction from the p-type layer toward the n-type layer.

A nitride semiconductor light emitting element comprising a light emitting layer, wherein:

• the light emitting layer includes an InxGa1-xN well layer, where 0<x≦1, having a principal surface that is an m-plane;
• a depth profile of an In composition ratio x in the InxGa1-xN well layer has a plurality of peaks;
• values of the In composition ratios x at the respective plurality of peaks are different from one another;
• the nitride semiconductor light emitting element further comprises a p-type layer and an n-type layer that are provided on the principal surface side and a rear surface side, respectively, of the light emitting layer;
• the plurality of peaks include four or more peaks, and the values of the In composition ratios x at the four or more peaks are arranged so as to be V-shaped or inverted V-shaped in a direction from the p-type layer toward the n-type layer.

A nitride semiconductor light emitting element comprising a light emitting layer, wherein:

• the light layer includes an InxGa1-xN well layer, where 0<x≦1, having a principal surface that is an m-plane;
• a depth profile of an In composition ratio x in the InxGa1-xN well layer has a plurality of peaks;
• values of the In composition ratios x at the respective plurality of peaks are different from one another;
• and
• an absolute value of a temperature coefficient of a wavelength of light generated in the light emitting layer is 0.03 or less.

A nitride semiconductor light emitting element comprising a light emitting layer, wherein:

• the light emitting layer includes an InxGa1-xN well layer 0<x≦1, having a principal surface that is an m-plane;
• a depth profile of an In composition ratio x in the InxGa1-xN well layer has a plurality of peaks;
• values of the In composition ratios x at the respective plurality of peaks are different from one another;
• and
• a temperature coefficient of a wavelength of light generated in the light emitting layer is a negative value.