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US 9,318,657 B2Granted
Light emitting devices, systems, and methods of manufacturing
AssigneeXiamen Sanan Optoelectronics Technology Co., Ltd.
InventorsWenxin Chen, Zhibai Zhong, Charles Siu Huen Leung
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Abstract
A light emitting device includes: a substrate; an n layer; an active light emitting region having a light emitting side; a p layer; a reflector opposite the light emitting side; and a plurality of microchannels configured to optically couple the active light emitting region with the reflector.
Claims17
A light emitting device comprising:
- a substrate;
- an n layer;
- an active light emitting region having a light emitting side;
- a p layer;
- a reflector opposite the light emitting side;
- and
- a plurality of microchannels configured to optically couple the active light emitting region with the reflector;
- the light emitting device further comprising:
- a p-type semiconductor overlying layer between the p layer and the reflector,
- wherein the plurality of microchannels are disposed in the p-type semiconductor overlying layer and are configured to reduce self-absorption to thereby increase light emission efficiency of the light emitting device;
- the light emitting device further comprising:
- a submount disposed over the reflector, wherein the submount includes a plurality of conductive channels;
- a contact layer;
- and
- a conductive layer.
12 more elements
A system comprising one or more light emitting devices, wherein each of the light emitting devices comprises:
- a substrate;
- an n layer;
- an active light emitting region having a light emitting side;
- a p layer;
- a reflector opposite the light emitting side;
- and
- a p-type semiconductor overlying layer between the p layer and the reflector, having a plurality of microchannels disposed therein configured to optically couple the active light emitting region with the reflector and reduce self-absorption to thereby increase light emission efficiency of the light emitting device;
- wherein the plurality of microchanels have a depth of about 10-500 nm, and wherein each of the light emitting devices further comprises:
- a submount disposed over the reflector, wherein the submount includes a plurality of conductive channels;
- a contact layer;
- and
- a conductive layer.
9 more elements
A method of manufacturing a light emitting device,
- wherein the device comprises:
- a substrate;
- an n layer;
- an active light emitting region having a light emitting side;
- a p layer;
- a reflector opposite the light emitting side;
- and
- a p-type semiconductor overlying layer between the p layer and the reflector, having a plurality of microchannels disposed therein configured to optically couple the active light emitting region with the reflector and reduce self-absorption to thereby increase light emission efficiency of the light emitting device;
- the light emitting device further comprising:
- a submount disposed over the reflector, wherein the submount includes a plurality of conductive channels;
- a contact layer;
- and
- a conductive layer;
- wherein the method comprises:
- epitaxially growing the p-type semiconductor overlying layer;
- and
- forming, using dry etching, the plurality of microchannels with a depth of about 10-500 nm.
14 more elements
Dependencies are inferred from the claim text.