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US 9,318,655 B2Granted
Elevated LED
AssigneeQuNano AB
InventorsBo Pedersen, Lars Samuelson, Jonas Ohlsson, Patrik Svensson
Life of this patent
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Abstract
The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
Claims15
An upstanding nanostructured LED comprising:
- a substrate and a nanowire protruding from the substrate, wherein a bulb is arranged in connection with the nanowire and at an elevated position with regards to the substrate, the bulb having a larger diameter than the nanowire, the bulb comprising an active region to produce light and the bulb having bulk properties;
- a mask layer located over the substrate and surrounding a portion of the nanowire not covered by the bulb, wherein the mask layer comprises a silicon nitride mask layer;
- a spacer layer located over the silicon nitride mask layer and below the bulb, the spacer layer surrounding a portion of the nanowire not covered by the bulb;
- and
- wherein a p-n junction is present at an interface between the bulb and the nanowire above the spacer layer.
2 more elements
Dependencies are inferred from the claim text.