US 9,318,653 B2Granted

Luminescent device and manufacturing method for luminescent device and semiconductor device

AssigneeDowa Electronics Materials Co., Ltd.

InventorsYoshitaka Kadowaki, Tatsunori Toyota

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Abstract

A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer.

Claims6

Dependent claims

A manufacturing method for a semiconductor device, comprising:

a device region formation step of forming a device region constituted by a semiconductor layer on part of an epitaxial substrate through a lift-off layer;
a sacrificing portion formation step of forming a sacrificing portion, being not removed in a later-mentioned chemical lift-off step, around the device region on the epitaxial substrate;
a covering step of forming a covering layer that covers the epitaxial substrate while leaving exposed at least part of the semiconductor layer and at least part of the sacrificing portion;
a foundation layer formation step of forming a foundation layer on a surface on the epitaxial substrate including part on the semiconductor layer and on the sacrificing portion and a covering layer surface;
a plating step of forming a supporting substrate by providing plating on the foundation layer;
a covering layer removing step of dissolution removing of the covering layer;
a chemical lift-off step of separating between the semiconductor layer and the epitaxial substrate by dissolution removing of the lift-off layer;
and
a sacrificing portion removing step of separating between the epitaxial substrate and the foundation layer at the sacrificing portion after the chemical lift-off step.

6 more elements

A manufacturing method for a luminescent device including a semiconductor layer having a luminescent layer, comprising:

a device region formation step of forming a device region constituted by the semiconductor layer on part of an epitaxial substrate through a lift-off layer;
a sacrificing portion formation step of forming a sacrificing portion, being not removed in a later-mentioned chemical lift-off step, around the device region on the epitaxial substrate;
a covering step of forming a covering layer that covers the epitaxial substrate while leaving exposed at least part of the semiconductor layer and at least part of the sacrificing portion;
a foundation layer formation step of forming a foundation layer on a surface on the epitaxial substrate including part on the semiconductor layer and on the sacrificing portion and a covering layer surface;
a plating step of forming a supporting substrate by providing plating on the foundation layer;
a covering layer removing step of dissolution removing of the covering layer;
a chemical lift-off step of separating between the semiconductor layer and the epitaxial substrate by dissolution removing of the lift-off layer;
and
a sacrificing portion removing step of separating between the epitaxial substrate and the foundation layer at the sacrificing portion after the chemical lift-off step.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/725,635Filed 29 May 2015 · division
Priority: JP 2011-00708317 Jan 2011
Published: US 2015/0295129 A115 Oct 2015
Granted: 19 Apr 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10H 20/815
Bodies: having stress relaxation structures, e.g. buffer layers
H10H 20/01
Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]: manufacture or treatment
H10H 20/01335
With a substrate not being Group III-V materials: the light-emitting regions comprising nitride materials
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers

Family

PCT/JP2012/050363Parent of this division · filed 11 Jan 2012
US 2015/0295129 A1Pre-grant publication · published 15 Oct 2015
Application13/978,677Parent of this division
US 9,082,893 B2Parent of this division
US 2013/0285074 A1Published application
US 9,318,653 B2This patent

From the US filing history. Foreign family members aren’t listed.