Method of manufacturing semiconductor light emitting device

A method of manufacturing a semiconductor light emitting device, the method comprising:

• forming a light emitting structure layer including an active layer on a first substrate;
• bonding the second substrate to the light emitting structure layer at a first temperature higher than room temperature;
• removing the first substrate from the light emitting structure layer at a second temperature higher than room temperature;
• and
• cooling the second substrate and the light emitting structure to reach room temperature,
• wherein the active layer has a tensile stress induced thereto after the forming of the light emitting structure layer, and the second substrate has a coefficient of thermal expansion greater than a coefficient of thermal expansion of the active layer to induce compressive stress in the active layer during the cooling of the second substrate.

A method of manufacturing a semiconductor light emitting device, the method comprising:

• forming, on a first substrate, a light emitting structure layer to include an active layer;
• determining whether compressive or tensile stress is induced in the active layer;
• selectively forming, based on a result of the determination, a second substrate to have a material having a coefficient of thermal expansion lower than a coefficient of thermal expansion of the active layer or to have a material having a coefficient of thermal expansion greater than the coefficient of thermal expansion of the active layer;
• bonding the second substrate to the light emitting structure layer at a first temperature higher than room temperature,
• removing the first substrate from the light emitting structure layer at a second temperature higher than room temperature;
• cooling the second substrate and the light emitting structure to reach room temperature,
• wherein the second substrate is formed to have a material having a coefficient of thermal expansion lower than the coefficient of thermal expansion of the active layer, when it is determined that compressive stress is induced in the active layer.