Nitride semiconductor light-emitting element

A nitride semiconductor light-emitting element, comprising:

• an n-type nitride semiconductor layer;
• a p-type nitride semiconductor layer;
• and
• a multiple quantum well light-emitting layer provided between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer,
• said multiple quantum well light-emitting layer including a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to said p-type nitride semiconductor layer,
• said first light-emitting layer including a plurality of first quantum well layers and a first barrier layer provided between said plurality of first quantum well layers,
• said second light-emitting layer including a plurality of second quantum well layers and a second barrier layer provided between said plurality of second quantum well layers,
• said second quantum well layers being thicker than said first quantum well layers,
• said second barrier layer being thinner than said first barrier layer, and
• said second barrier layer being thinner than said third barrier layer.