Gallium arsenide avalanche photodiode

Abstract

An avalanche photodiode can include: an avalanche region having one or more layers prepared from GaAs; an N− absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N− absorption layer; and optionally a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N− absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer. The avalanche photodiode can include a window layer above the N-type layer and lower conductivity layer, and an anode contact above the window layer. The avalanche photodiode can include an N+ barrier layer below the N− absorption layer, an N+ conduction layer below the N+ barrier layer, a substrate below the N+ conduction layer, and a cathode contact coupled with the N+ conduction layer.

Dependencies are inferred from the claim text.