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US 9,318,637 B2Granted
Solar cell with improved conversion efficiency
Assignee3M Innovative Properties Company
InventorMichael A. Haase
Life of this patent
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Abstract
Solar cells exhibiting improved conversion efficiency are disclosed. Particularly, multi-pn junction solar cells that contain a current spreading layer as well as concentrating photovoltaic modules that include such a solar cell and light concentrating optics are disclosed. The multi-pn junctions in question may generally be made up of III-V semiconductor materials, while the current spreading layer may generally be made up of II-VI semiconductor materials.
Claims16
A multi junction solar cell, comprising:
- a first pn junction comprising a first n-doped III-V semiconductor layer and a first p-doped III-V semiconductor layer;
- a second pn junction positioned adjacent to the first pn junction, the second pn junction comprising a second n-doped III-V semiconductor layer and a second p-doped III-V semiconductor layer;
- a current spreading layer positioned adjacent to the first pn junction on the side opposite the second pn junction, the current spreading layer comprising a II-VI semiconductor layer that is disposed directly on a surface of the first pn junction to form an epitaxial structure, wherein the composition of the II-VI semiconductor layer is selected from the group consisting of n-type doped BeMgZnSe and p-type doped BeZnTe;
- and
- an electrode positioned on the current spreading layer opposite the first pn junction.
2 more elements
A concentrating photovoltaic module, comprising:
- an optical element capable of concentrating sunlight;
- and
- a multi junction solar cell,
- wherein the optical element receives incident sunlight and focuses it on the multi-junction solar cell, such that light with an intensity of over 100 suns is incident upon the multi junction solar cell,
- wherein the multi junction solar cell comprises one or more III-V semiconductor pn junctions and further comprises a semiconductor current spreading layer positioned between the III-V semiconductor pn junctions and the optical element, such that, focused light from the optical element is incident upon the current spreading layer, and
- wherein the current spreading layer comprises a II-VI semiconductor layer that is disposed directly on a surface of the one or more III-V semiconductor pn junctions to form an epitaxial structure, and the composition of the II-VI semiconductor layer comprises n-typed doped BeMgZnSe, or p-type doped BeZnTe.
3 more elements
Dependencies are inferred from the claim text.