Method for fabricating sensor using multiple patterning processes

A method for fabricating a sensor comprising:

• forming a pattern of a gate line and a pattern of a gate electrode connected with the gate line on a base substrate by using a first patterning process;
• forming a gate insulating layer overlaying the base substrate, and forming a pattern of an active layer on the gate insulating layer and over the gate electrode, a pattern of an ohmic layer on the active layer, a pattern of a source electrode and a drain electrode on the ohmic layer and arranged opposed to each other to form a channel, a pattern of a data line connected with the drain electrode, and a pattern of a receive electrode connected with the source electrode;
• forming a pattern of a passivation protective layer on the source electrode, the drain electrode and the channel by using a second patterning process;
• forming a pattern of a photodiode on the receive electrode and a pattern of a transparent electrode on the photodiode by using a third patterning process;
• forming a pattern of a first passivation layer by using a fourth patterning process, the first passivation layer has a via hole over the transparent electrode;
• forming a pattern of a bias line on the first passivation layer and connected with the transparent electrode through the via hole over the transparent electrode, and a pattern of a light-shield strip on the source electrode, the drain electrode and the channel by using a fifth patterning process;
• wherein forming the pattern of the active layer, the pattern of the ohmic layer, the pattern of the source electrode and the drain electrode, the pattern of the data line and the pattern of the receive electrode in a same layer by using a single patterning process;
• wherein for said single patterning process only one mask is used.