Schottky structure employing central implants between junction barrier elements
AssigneeCree, Inc.
InventorQingchun Zhang
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Abstract
The present disclosure relates to a Schottky diode having a drift layer and a Schottky layer. The drift layer is predominantly doped with a doping material of a first conductivity type and has a first surface associated with an active region. The Schottky layer is provided over the active region of the first surface to form a Schottky junction. A plurality of junction barrier elements are formed in the drift layer below the Schottky junction, and a plurality of central implants are also formed in the drift layer below the Schottky junction. In certain embodiments, at least one central implant is provided between each adjacent pair of junction barrier elements.
Claims27
A Schottky diode comprising:
- a drift layer predominantly doped with a doping material of a first conductivity type and having a first surface associated with an active region;
- a Schottky layer over the active region of the first surface to form a Schottky junction;
- a plurality of junction barrier elements formed in the drift layer below the Schottky junction;
- a plurality of central implants formed in the drift layer below the Schottky junction;
- and
- a buffer region in a top portion of the drift layer, wherein the buffer region is doped with the doping material of the first conductivity type at a higher concentration than a remaining lower portion of the drift layer and the plurality of central implants reside in the buffer region.
Dependencies are inferred from the claim text.