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US 9,318,623 B2Granted
Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
AssigneeCree, Inc.
InventorsQingchun Zhang, Jason Henning
Life of this patent
Estimating the term…
Abstract
An electronic device includes a drift region, a Schottky contact on a surface of the drift region, and an edge termination structure in the drift region adjacent the Schottky contact. The edge termination structure includes a recessed region that is recessed from the surface of the drift region by a distance d that may be about 0.5 microns.
Claims23
An electronic device, comprising:
- a drift region;
- a Schottky contact on a surface of the drift region;
- an edge termination in the drift region adjacent the Schottky contact, wherein the edge termination comprises a recessed region that is recessed from the surface of the drift region by a distance d and an edge termination structure in the recessed region;
- and
- an upper guard ring at the surface of the drift region beneath the Schottky contact and a plurality of lower guard rings at a surface of the recessed region, and wherein the upper guard ring and the plurality of lower guard rings have a second conductivity type that is opposite a first conductivity type of the drift region, wherein the lower guard rings comprise rings of the second conductivity type that are electrically isolated from one another and that surround an active region defined by the Schottky contact.
2 more elements
An electronic device, comprising:
- a drift region having a first conductivity type;
- an active region including a junction barrier Schottky region at a surface of the drift region having a second conductivity type opposite the first conductivity type wherein a p-n junction between the junction barrier Schottky region and the drift region is configured to sustain a voltage when the electronic device is reverse biased;
- an edge termination in the drift region adjacent the active region, wherein the edge termination comprises a recessed region that is recessed from the surface of the drift region by a distance d and an edge termination structure in the recessed region;
- and
- an upper guard ring in the active region at the surface of the drift region inside the edge termination;
- wherein the edge termination structure comprises a plurality of guard rings at a surface of the recessed region, wherein the plurality of guard rings have a second conductivity type that is opposite a first conductivity type of the drift region and wherein the guard rings comprise rings of the second conductivity type that are electrically isolated from one another and that surround the active region;
- and
- wherein the distance d is greater than a depth of the junction barrier Schottky region from the surface of the drift region into the drift region.
5 more elements
Dependencies are inferred from the claim text.