Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuta Endo, Kosei Noda
Life of this patent
Estimating the term…
Abstract
To provide a transistor with stable electric characteristics, provide a transistor having a small current in a non-conductive state, provide a transistor having a large current in a conductive state, provide a semiconductor device including the transistor, or provide a durable semiconductor device, a semiconductor device includes a first insulator containing excess oxygen, a semiconductor over the first insulator, a second insulator over the semiconductor, and a conductor having a region overlapping with the semiconductor with the second insulator provided therebetween. A region containing boron or phosphorus is located between the first insulator and the semiconductor.
Claims21
A semiconductor device comprising:
- a first insulating film;
- an oxide semiconductor film over the first insulating film;
- a second insulating film over the oxide semiconductor film;
- and
- a first conductive film overlapping with the oxide semiconductor film with the second insulating film provided therebetween,
- wherein the first insulating film includes a first region and a second region,
- wherein the oxide semiconductor film includes a first region and a second region,
- wherein each of the second region of the first insulating film and the second region of the oxide semiconductor film includes boron or phosphorus,
- wherein the second region of the first insulating film is in contact with the second region of the oxide semiconductor film,
- wherein the first conductive film overlaps with the first region of the first insulating film and the first region of the oxide semiconductor film, and
- wherein the first conductive film does not overlap with the second region of the first insulating film and the second region of the oxide semiconductor film.
A semiconductor device comprising:
- a first insulating film;
- an oxide semiconductor film over the first insulating film;
- a second insulating film over the oxide semiconductor film;
- a first conductive film overlapping with the oxide semiconductor film with the second insulating film provided therebetween;
- and
- a second conductive film electrically connected to the oxide semiconductor film,
- wherein the first insulating film includes a first region and a second region,
- wherein the oxide semiconductor film includes a first region and a second region,
- wherein each of the second region of the first insulating film and the second region of the oxide semiconductor film includes boron or phosphorus,
- wherein the second region of the first insulating film is in contact with the second region of the oxide semiconductor film,
- wherein the first conductive film overlaps with the first region of the first insulating film and the first region of the oxide semiconductor film, and
- wherein the first conductive film does not overlap with the second region of the first insulating film and the second region of the oxide semiconductor film.
A semiconductor device comprising:
- a first insulating film having a projection;
- an oxide semiconductor film over the projection;
- a second insulating film over the oxide semiconductor film;
- a first conductive film overlapping with the oxide semiconductor film with the second insulating film provided therebetween;
- and
- a second conductive film electrically connected to the oxide semiconductor film
- wherein the first insulating film includes a first region and a second region,
- wherein the oxide semiconductor film includes a first region and a second region,
- wherein each of the second region of the first insulating film and the second region of the oxide semiconductor film includes boron or phosphorus,
- wherein the second region of the first insulating film is in contact with the second region of the oxide semiconductor film,
- wherein the first conductive film overlaps with the first region of the first insulating film and the first region of the oxide semiconductor film,
- wherein the first conductive film does not overlap with the second region of the first insulating film and the second region of the oxide semiconductor film, and
- wherein the first conductive film covers a side surface of the projection.
Dependencies are inferred from the claim text.