Transistor having two metal oxide films and an oxide semiconductor film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.
Claims25
A semiconductor device comprising:
- a first metal oxide film over a substrate;
- an oxide semiconductor film over and in contact with the first metal oxide film;
- source and drain electrodes in contact with the oxide semiconductor film;
- a second metal oxide film over and in contact with the oxide semiconductor film;
- a first insulating film over and in contact with the second metal oxide film;
- and
- a gate electrode over the first insulating film,
- wherein the oxide semiconductor film is surrounded by the first metal oxide film and the second metal oxide film in a channel width direction, and
- wherein the source and drain electrodes are provided between the oxide semiconductor film and the second metal oxide film.
A semiconductor device comprising:
- a first metal oxide film over a substrate;
- an oxide semiconductor film over and in contact with the first metal oxide film;
- source and drain electrodes in contact with the oxide semiconductor film;
- a second metal oxide film over and in contact with the oxide semiconductor film;
- a first insulating film over and in contact with the second metal oxide film;
- and
- a gate electrode over the first insulating film,
- wherein the oxide semiconductor film is surrounded by the first metal oxide film and the second metal oxide film in a channel width direction,
- wherein each of the first metal oxide film and the second metal oxide film contains a constituent element of the oxide semiconductor film, and
- wherein the source and drain electrodes are provided between the oxide semiconductor film and the second metal oxide film.
A semiconductor device comprising:
- a second insulating film over a substrate;
- a first metal oxide film over and in contact with the second insulating film;
- an oxide semiconductor film over and in contact with the first metal oxide film;
- source and drain electrodes in contact with the oxide semiconductor film;
- a second metal oxide film over and in contact with the oxide semiconductor film;
- a first insulating film over and in contact with the second metal oxide film;
- and
- a gate electrode over the first insulating film,
- wherein the oxide semiconductor film is surrounded by the first metal oxide film and the second metal oxide film in a channel width direction,
- wherein each of the first metal oxide film and the second metal oxide film contains a constituent element of the oxide semiconductor film,
- wherein the second insulating film contains aluminum oxide, and
- wherein the source and drain electrodes are provided between the oxide semiconductor film and the second metal oxide film.
A semiconductor device comprising:
- a second insulating film over a substrates;
- a first metal oxide film over and in contact with the second insulating film;
- an oxide semiconductor film over and in contact with the first metal oxide film;
- source and drain electrodes in contact with the oxide semiconductor film;
- a second metal oxide film over and in contact with the oxide semiconductor film;
- and
- a first insulating film over the second metal oxide film,
- wherein the oxide semiconductor film is surrounded by the first metal oxide film and the second metal oxide film in a channel width direction,
- wherein each of the first metal oxide film and the second metal oxide film contains a constituent element of the oxide semiconductor film,
- wherein each of the first insulating film and the second insulating film contains aluminum oxide, and
- wherein the source and drain electrodes are provided between the oxide semiconductor film and the second metal oxide film.
Dependencies are inferred from the claim text.