Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
Life of this patent
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Abstract
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
Claims21
A display device comprising:
- a source wiring, wherein the source wiring includes a first conductive layer formed over an insulating surface, wherein a bottom face of the first conductive layer directly contacts the insulating surface,
- a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer formed over and in contact with the insulating surface;
- an insulating film formed over the transistor, the first conductive layer and the second conductive layer,
- a gate wiring formed over and in contact with the insulating film, wherein the gate wiring is connected with the gate electrode;
- and
- a third conductive layer over and in contact with the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the source wiring through the third conductive layer.
A display device comprising:
- a source wiring, wherein the source wiring includes a first conductive layer formed over an insulating surface, wherein a bottom face of the first conductive layer contacts the insulating surface,
- a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer formed over and in contact with the insulating surface;
- an insulating film formed over the transistor, the first conductive layer and the second conductive layer,
- a gate wiring formed over and in contact with the insulating film, wherein the gate wiring is connected with the gate electrode;
- a third conductive layer over and in contact with the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the source wiring through the third conductive layer;
- and
- a capacitor wiring formed over and in contact with the insulating film, wherein the capacitor wiring extends in parallel with the gate wiring.
A display device comprising:
- a source wiring, wherein the source wiring includes a first conductive layer,
- a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer;
- an insulating film formed over the first conductive layer and the second conductive layer, wherein the insulating film is in contact with an upper surface of the first conductive layer and an upper surface of the second conductive layer,
- a gate wiring formed over the insulating film, wherein the gate wiring is connected with the gate electrode;
- and
- a third conductive layer over the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the first conductive layer through the third conductive layer.
Dependencies are inferred from the claim text.