Semiconductor device including a gate electrode

A semiconductor device comprising:

• a plurality of first gate electrodes buried in a semiconductor substrate including an active region and a device isolation film;
• a plurality of junction regions, each of the plurality of junction regions disposed in a portion of the active region between two adjacent first gate electrodes, the plurality of junction regions including storage node junction regions and a bit line junction region disposed between the storage node junction regions;
• a plurality of storage node contact plugs disposed over and coupled to the storage node junction regions, respectively;
• a plurality of storage nodes coupled to and disposed over the pluralitystorage node contact plugs, respectively;
• and
• a plurality of second gate electrodes disposed over the plurality of first gate electrodes, respectively, and configured to prevent leakage charges of the plurality of storage nodes disposed in the active region,
• wherein each of the plurality of first gate electrodes and a corresponding one of the plurality of second gate electrodes are isolated from each other by an insulation film pattern.

A semiconductor device comprising:

• two adjacent first gate electrodes, one of the first gate electrodes buried in an active region and the other one of the first gate electrodes buried in a device isolation film defining the active region in a semiconductor substrate;
• a storage node contact junction region disposed in a portion of the active region that is disposed between the two adjacent first gate electrodes;
• a storage node contact plug disposed over the storage node contact junction region and including a first N-type pattern, a P-type body, and a second N-type pattern;
• a storage node disposed over the storage node contact plug;
• and
• a second gate electrode disposed over a sidewall of the P-type body.