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US 9,318,599 B2Granted
Power semiconductor device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsJae Kyu Sung, Jae Hoon Park, Kee Ju Um, In Hyuk Song
Life of this patent
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Abstract
A power semiconductor device may include: a first conductive type drift layer in which trench gates are formed; a second conductive type well region formed on the drift layer so as to contact the trench gate; a first conductive type source region formed on the well region so as to contact the trench gate; and a device protection region formed below a height of a lowermost portion of the source region in a height direction.
Claims11
A power semiconductor device comprising;
- a first conductive type drift layer;
- trench gates of same type next to each other including gate insulating layers disposed on respective sidewall and bottom surfaces thereof;
- a second conductive type well region disposed on the drift layer so as to contact the gate insulating layers;
- a-first conductive type source regions disposed on the well region so as to contact the gate insulating layers;
- channel regions formed in a portion of the well region contacting the trench gates when the device is turned on;
- and
- a device protection region disposed below a height from a lowermost portion of the source regions in a height direction, disposed between the drift layer and the well region, contacting the trench gates, and insulating the channel regions directly when latch-up or a short-circuit occurs,
- the trench gates penetrating through the well region, the source regions and the device protection region.
5 more elements
A power semiconductor device comprising:
- a first conductive type drift layer;
- a plurality of trench gates of same type next to each other formed lengthwise in the drift layer to be spaced apart by a predetermined interval in one direction, and including gate insulating layers disposed respectively on sidewall and bottom surfaces thereof;
- a second conductive type well region disposed on the drift layer so as to contact the gate insulating layers;
- first conductive type source regions disposed in the well region to be spaced apart by a predetermined interval in one direction so as to contact the gate insulating layers;
- channel regions formed in a portion of the well region contacting the trench gates when the device is turned on;
- and
- a device protection region disposed below a height from a lowermost portion of the source regions in a height direction, disposed between the drift layer and the well region, contacting the trench gates, and insulating the channel region directly when latch-up or a short-circuit occurs,
- the trench gates penetrating through the well region, the source regions and the device protection region.
5 more elements
Dependencies are inferred from the claim text.