Ferroelectric field-effect transistor
AssigneeAcreo Swedish Ict AB
InventorsSimone Fabiano, Xavier Crispin, Magnus Berggren
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Abstract
A ferroelectric field-effect transistor device includes: a semiconductor layer; a ferroelectric layer; and an ion conductor layer arranged between the semiconductor layer and the ferroelectric layer and in contact with the semiconductor layer. Methods for producing the ferroelectric field-effect transistor device and using the ferroelectric field-effect transistor device in non-volatile memory devices that reduce a readout voltage to a voltage as low as 0.2 V are also disclosed.
Claims20
A ferroelectric field-effect transistor device, comprising:
- a semiconductor layer;
- a ferroelectric layer;
- and
- an ion conductor layer arranged between said semiconductor layer and said ferroelectric layer and in contact with the semiconductor layer.
Method of producing a ferroelectric field-effect transistor device, comprising:
- providing a substrate;
- applying a semiconductor layer;
- applying a ferroelectric layer;
- and
- applying an ion conductor layer;
- wherein said ion conductor layer is arranged between said semiconductor layer and said ferroelectric layer and in contact with the semiconductor layer.
A method, comprising:
- outputting, using an ion conductor layer between a ferroelectric layer and a semiconductor layer of a ferroelectric field-effect transistor device, readout voltage of a non-volatile memory device including the ferroelectric field-effect transistor device to a voltage as low as 0.2 V.
Dependencies are inferred from the claim text.