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US 9,318,595 B2Granted
Method of forming gate dielectric layer and method of fabricating semiconductor device
AssigneeSK hynix Inc.
InventorsSeung-Mi Lee, Yun-Hyuck Ji, Beom-Yong Kim, Bong-Seok Jeon
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Abstract
A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process.
Claims5
A semiconductor device comprising:
- a gate dielectric layer formed over a substrate and including a plasma oxide;
- a gate electrode formed over the gate dielectric layer;
- and
- a channel region including a monocrystalline germanium-containing region, wherein the monocrystalline germanium-containing region is formed in the substrate under the gate dielectric layer,
- wherein the gate dielectric layer comprises an interlayer and a high-k dielectric material over the interlayer.
2 more elements
Dependencies are inferred from the claim text.