Active area shaping of III-nitride devices utilizing a source-side field plate and a wider drain-side field plate
AssigneeInfineon Technologies Americas Corp.
InventorMichael A. Briere
Life of this patent
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Abstract
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride heterojunction. A gate arrangement is situated in the gate well and includes a gate electrode, a source-side field plate, and a drain-side field plate. The source-side field plate and the drain-side field plate each include steps, and the drain-side field plate is wider than the source-side field plate.
Claims16
A III-nitride semiconductor device comprising:
- a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas;
- a gate well formed in a dielectric body, said dielectric body situated over said III-nitride heterojunction and including first, second, and third dielectric layers providing respective ledges situated within said gate well;
- first and second ohmic electrodes extending through said dielectric body to contact said III-nitride heterojunction;
- a single gate dielectric layer situated between said III-nitride heterojunction and said dielectric body, said single gate dielectric layer extending from said first ohmic electrode to said second ohmic electrode;
- a gate arrangement situated in said gate well and comprising a gate electrode, a source-side field plate, and a drain-side field plate;
- said source-side field plate and said drain-side field plate each comprising steps situated within said gate well and a step situated over said dielectric body, said steps situated within said well being defined by said respective ledges of said first, second, and third dielectric layers;
- said step of said drain-side field plate situated over said dielectric body being wider than said step of said source-side field plate situated over said dielectric body, and also being wider than said steps of said drain-side field plate situated within said gate well.
A III-nitride semiconductor device comprising:
- a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas;
- a gate well formed in a dielectric body, said dielectric body situated over said III-nitride heterojunction and including first, second, and third dielectric layers providing respective ledges situated within said gate well;
- first and second ohmic electrodes extending through said dielectric body to contact said III-nitride heterojunction;
- a single gate dielectric layer situated between and adjoining said III-nitride heterojunction and said dielectric body, said single gate dielectric layer extending from said first ohmic electrode to said second ohmic electrode;
- a gate arrangement situated in said gate well and comprising a gate electrode, a source-side field plate, and a drain-side field plate;
- said source-side field plate and said drain-side field plate each comprising steps situated within said gate well and a step situated over said dielectric body, said steps situated within said well being defined by said respective ledges of said first, second, and third dielectric layers, wherein said step of said drain-side field plate situated over said dielectric body is wider than said step of said source-side field plate situated over said dielectric body, and is also wider than said steps of said drain-side field plate situated within said gate well.
Dependencies are inferred from the claim text.