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US 9,318,591 B2Granted
Transistor device and materials for making
AssigneeThe University of Manchester
InventorsAndre Geim, Konstantin Novoselov, Roman Gorbachev, Leonid Ponomarenko, Liam Britnell
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Abstract
This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
Claims14
A graphene heterostructure having:
- a first graphene layer, shaped to form a first structure comprising at least one contact region;
- a second graphene layer, shaped to form a second structure comprising at least one contact region;
- and
- a spacer positioned between the first graphene layer and the second graphene layer, wherein the spacer has a thickness in the range 3 to 8 layers of one or more materials;
- wherein the graphene heterostructure includes two or more contacts, including a source contact and a drain contact;
- and
- wherein the source contact is positioned on at least one of the contact regions of the first structure;
- and
- wherein the drain contact is positioned on at least one of the contact regions of the second structure.
6 more elements
A transistor comprising:
- a source electrode;
- a drain electrode;
- and
- an insulating barrier in contact with and situated between both the source electrode and the drain electrode, the insulating barrier comprising from 3 to 8 layers of one or more materials;
- wherein at least one of the source electrode and the drain electrode comprises a layer of graphene and the other electrode comprises a layer of a conductive material.
2 more elements
A transistor comprising:
- a source electrode;
- a drain electrode;
- and
- an insulating barrier in contact with and situated between both the source electrode and the drain electrode;
- wherein the thickness of the insulating barrier layer is selected to provide a quantum tunnelling electron transport between the source electrode and the drain electrode;
- and
- wherein at least one of the source electrode and the drain electrode comprises a layer of graphene and the other electrode comprises a layer of a conductive material.
4 more elements
A graphene heterostructure having:
- a first graphene layer, shaped to form a first structure comprising at least one contact region;
- a second graphene layer, shaped to form a second structure comprising at least one contact region;
- and
- a spacer positioned between the first graphene layer and the second graphene layer, wherein the spacer has a thickness in the range 1 to 30 layers of one or more materials;
- wherein the graphene heterostructure includes two or more contacts, including a source contact and a drain contact;
- and
- wherein the source contact is positioned on at least one of the contact regions of the first structure;
- and
- wherein the drain contact is positioned on at least one of the contact regions of the second structure.
6 more elements
Dependencies are inferred from the claim text.