Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown

A semiconductor structure comprising:

• a first seed layer and a second seed layer spaced apart from each other and on an insulator layer, wherein the first seed layer and the second seed layer have a doping of a first conductivity type;
• an intrinsic base located between the first seed layer and the second seed layer and on the insulator layer, wherein the intrinsic base is spaced apart from the first seed layer by a first gap and is spaced apart from the second seed layer by a second gap, wherein the intrinsic base has a doping of the first conductivity type, and wherein the intrinsic base, the first seed layer and the second seed layer include a semiconductor material;
• an emitter covering the first seed layer, and located in the first gap and on a first vertical surface of the intrinsic base;
• a collector covering the second seed layer, and located in the second gap and on a second vertical surface of the intrinsic base that is opposite to the first vertical surface of the intrinsic base, wherein the emitter and the collector include a semiconductor material and having a doping of a second conductivity type opposite to the first conductivity type;
• and
• an extrinsic base located on a top surface of the intrinsic base, wherein the intrinsic base contacts the emitter, the collector and the extrinsic base, and wherein the intrinsic base has an energy band gap less than an energy band gap of the emitter and an energy band gap of the collector.