Forming wrap-around silicide contact on finFET

A method of forming a transistor, the method comprising:

• providing a structure including one or more dummy gates on a top of an isolation layer and over one or more fins, a hard mask on top of the one or more dummy gates, and spacers on sides of the one or more dummy gates and the hard mask, wherein the isolation layer is on top of a substrate;
• depositing a first intermediate layer on top of the structure, wherein first trenches having been covered in the first intermediate layer are on sides of the one or more fins;
• depositing a second intermediate layer on top of the structure, such that the first trenches are filled, wherein a portion of the second intermediate layer is recessed to correspond to a height to fill the first trenches;
• removing a portion of the first intermediate layer that is not covered by the second intermediate layer, such that second trenches are formed on the sides of the one or more fins, wherein pillars are formed of the second intermediate layer on top of the first intermediate layer not having been removed;
• depositing an epitaxial layer in the second trenches such that the epitaxial layer is laterally confined by the pillars, a top of the epitaxial layer forming a triangular shape that extends higher than the pillars;
• removing the pillars of the second intermediate layer on top of the first intermediate layer, such that straight sidewalls of the epitaxial layer are exposed;
• replacing the one or more dummy gates and the hard mask with one or more replacement gates;
• forming a first filling material on top of the structure, such that contact openings in the first filling material are formed over a source part of the epitaxial layer on the one or more fins, a drain part of the epitaxial layer on the one or more fins, and the one or more replacement gates;
• forming a metal silicide contact that wraps around the source part of the epitaxial layer of the one or more fins and the drain part of the epitaxial layer of the one or more fins, by depositing a conductive layer on top of the structure, wherein the conductive layer wraps around the source part of the epitaxial layer and the drain part of the epitaxial layer;
• depositing a second filling material on top of the first filling material;
• and
• planarizing the first filling material, the second filling material, and the conductive layer such that the conductive layer is not continuous, thereby separating the conductive layer from connecting the source part, the drain part, and the one or more replacement gates.