U-shaped semiconductor structure
AssigneeGlobalfoundries Inc.
InventorsKangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz
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Abstract
A method for forming a U-shaped semiconductor device includes growing a U-shaped semiconductor material along sidewalls and bottoms of trenches, which are formed in a crystalline layer. The U-shaped semiconductor material is anchored, and the crystalline layer is removed. Backfilling is formed underneath the U-shaped semiconductor material with a dielectric material for support. A semiconductor device is formed with the U-shaped semiconductor material.
Claims14
A method for forming a U-shaped semiconductor device, comprising:
- growing a U-shaped semiconductor material along sidewalls and bottoms of trenches, the trenches being formed in a crystalline layer;
- anchoring the U-shaped semiconductor material and removing the crystalline layer;
- backfilling underneath the U-shaped semiconductor material with a dielectric material for support;
- and
- forming a semiconductor device with the U-shaped semiconductor material.
A method for forming a transistor with a U-shaped channel, comprising:
- epitaxially growing a U-shaped semiconductor material along sidewalls and bottoms of trenches to form U-shaped fins, the trenches being formed in a crystalline layer;
- anchoring the U-shaped fins and selectively removing the crystalline layer;
- supporting the U-shaped fins by backfilling underneath the U-shaped fins with a dielectric material;
- forming a gate dielectric and a gate structure transversely over a longitudinal direction of the U-shaped fins;
- and
- forming source and drain regions adjacent to spacers formed parallel to the gate structure.
Dependencies are inferred from the claim text.