Method for making a semiconductor device while avoiding nodules on a gate
AssigneesSTMicroelectronics S.r.l., Globalfoundries Inc., International Business Machines Corporation
InventorsQing Liu, Ruilong Xie, Xiuyu Cai, Kejia Wang, Chun-chen Yeh
Life of this patent
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Abstract
A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate, and a gate overlying the semiconductor fins. The gate has a tapered outer surface. A first pair of sidewall spacers is formed adjacent the gate an exposed tapered outer surface is also defined. Portions of the gate are removed at the exposed tapered outer surface to define a recess. A second pair of sidewall spacers is formed covering the first pair of sidewall spacers and the recess. Source/drain regions are formed on the semiconductor fins.
Claims23
A method for making a semiconductor device comprising:
- forming, above a substrate, a plurality of laterally spaced-apart semiconductor fins;
- forming a gate overlying the plurality of semiconductor fins and having a tapered outer surface;
- forming a first pair of sidewall spacers adjacent the gate and defining an exposed tapered outer surface;
- removing portions of the gate at the exposed tapered outer surface to define a recess;
- forming a second pair of sidewall spacers covering the first pair of sidewall spacers and the recess;
- and
- forming source/drain regions on the plurality of semiconductor fins.
A method for making a semiconductor device comprising:
- forming, above a substrate, a plurality of laterally spaced-apart semiconductor fins;
- forming a gate overlying the plurality of semiconductor fins and having a tapered outer surface;
- forming a mask on an upper surface of the gate;
- forming a first pair of sidewall spacers adjacent the gate and defining an exposed tapered outer surface;
- removing portions of the gate at the exposed tapered outer surface to define a recess while the first pair of sidewall spacers and the mask remain intact;
- forming a second pair of sidewall spacers covering the first pair of sidewall spacers and the recess;
- and
- epitaxially forming source/drain regions on the plurality of semiconductor fins.
A method for making a semiconductor device comprising:
- forming, above a substrate, a plurality of laterally spaced-apart semiconductor fins;
- forming a dummy gate overlying the plurality of semiconductor fins and having a tapered outer surface;
- forming a first pair of sidewall spacers adjacent the dummy gate and defining an exposed tapered outer surface;
- leaving the first pair of sidewall spacers intact while removing portions of the dummy gate at the exposed tapered outer surface to define a recess;
- forming a second pair of sidewall spacers covering the first pair of sidewall spacers and the recess;
- and
- forming source/drain regions on the plurality of semiconductor fins.
Dependencies are inferred from the claim text.