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US 9,318,575 B2Granted
Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYeong-Jong Jeong, Jeong-Yun Lee, Shi Li Quan
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Abstract
A method of forming a semiconductor device includes forming a gate structure including a polysilicon gate and forming a capping spacer on a side surface of the gate structure to prevent parasitic epitaxial growth on the side surface of the polysilicon gate.
Claims19
A method for fabricating a semiconductor device comprising:
- forming a gate structure, in which a polysilicon gate and a hard mask are stacked and which includes an upper portion and a lower portion, on a substrate;
- forming a gate spacer on a side surface of the gate structure;
- forming a sacrificial layer, which surrounds a part of the gate spacer and the lower portion of the gate structure, on the substrate;
- forming a capping spacer on a side surface of the upper portion of the gate structure that projects beyond the sacrificial layer;
- and
- removing the sacrificial layer after forming the capping spacer.
3 more elements
A method of fabricating a semiconductor device, comprising:
- forming a gate structure including a polysilicon gate with a hard mask formed thereon;
- forming gate spacers extending along the entire side surfaces of the gate structure, including side surfaces of the hard mask;
- and
- forming a capping layer on upper side surfaces of the gate spacers, including portions of the upper side surfaces of the gate spacers that extend along side surfaces of the hard mask to prevent parasitic epitaxial growth,
- wherein the gate spacers only partially cover the sides of the polysilicon and the capping layer covers whatever portion of the sides not covered by the gate spacers.
2 more elements
A method of fabricating a semiconductor device, comprising:
- forming a gate structure including a polysilicon gate with a hard mask formed thereon;
- forming gate spacers extending along the entire side surfaces of the gate structure, including side surfaces of the hard mask;
- and
- forming a capping layer on upper side surfaces of the gate spacers, including portions of the upper side surfaces of the gate spacers that extend along side surfaces of the hard mask to prevent parasitic epitaxial growth;
- wherein the hard mask has a width that is larger than a width of the polysilicon gate, the method further comprising:
- forming a recess at each side of the gate structure, in a substrate;
- and
- forming a source/drain in the recess.
5 more elements
Dependencies are inferred from the claim text.