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US 9,318,570 B2Granted
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-Il Han, Jong-Un Kim, Jun-Soo Kim
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.
Claims21
A semiconductor device, comprising:
- a substrate including a device isolation layer and an active region isolated by the device isolation layer, the active region extending in a first horizontal direction such that a length of the active region in the first horizontal direction is longer than a width of the active region in a second horizontal direction perpendicular to the first horizontal direction;
- a trench in the active region;
- a gate electrode filling at least a portion of the trench;
- a recess in the substrate at one side of the trench, the recess overlapping a portion of the device isolation layer and the active region;
- and
- a lower contact plug filling the recess, wherein
- the portion of the device isolation layer is adjacent to an end portion of the active region in the first horizontal direction.
4 more elements
A semiconductor device, comprising:
- a substrate including a device isolation layer and first and second active regions isolated by the device isolation layer;
- a first trench in the first active region and a second trench in the second active region;
- a first gate electrode filling at least a portion of the first trench and a second gate electrode filling at least a portion of the second trench;
- a first recess in the substrate at one side of the first gate electrode, the first recess overlapping a portion of the device isolation layer and the first active region;
- a second recess in the substrate at one side of the second gate electrode, the second recess overlapping a portion of the device isolation layer and the second active region;
- a first lower contact plug filling the first recess;
- and
- a second lower contact plug filling the second recess and separated from the first lower contact plug.
5 more elements
A semiconductor device, comprising:
- a substrate including a device isolation layer and an adjacent source/drain region of an active region;
- a recess in a portion of the device isolation layer and the source/drain region;
- a lower contact plug filling the recess and formed directly on the source/drain region;
- and
- a storage node overlapping a portion of the lower contact plug.
2 more elements
Dependencies are inferred from the claim text.