Device isolation for III-V substrates
AssigneeInternational Business Machines Corporation
InventorsAnirban Basu, Guy M. Cohen
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Abstract
Techniques for device isolation for III-V semiconductor substrates are provided. In one aspect, a method of fabricating a III-V semiconductor device is provided. The method includes the steps of: providing a substrate having an indium phosphide (InP)-ready layer; forming an iron (Fe)-doped InP layer on the InP-ready layer; forming an epitaxial III-V semiconductor material layer on the Fe-doped InP layer; and patterning the epitaxial III-V semiconductor material layer to form one or more active areas of the device. A III-V semiconductor device is also provided.
Claims7
A III-V semiconductor device, comprising:
- a substrate having an indium phosphide-ready layer;
- an iron-doped indium phosphide layer on the indium phosphide-ready layer;
- and
- an epitaxial III-V semiconductor material layer on the iron-doped indium phosphide layer, wherein the epitaxial III-V semiconductor material layer is patterned into one or more active areas of the device, and wherein the epitaxial III-V semiconductor material layer is patterned to form one or more mesas which comprise the one or more active areas of the device.
Dependencies are inferred from the claim text.