Method for producing group III nitride semiconductor and template substrate
AssigneeToyoda Gosei Co., Ltd.
InventorsNaoyuki Nakada, Koji Okuno, Yasuhisa Ushida
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Abstract
A semiconductor substrate includes a sapphire substrate including a c-plane main surface and a groove in a surface thereof, the groove including side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. The side surfaces of the groove are an a-plane of sapphire. An axis of the Group III nitride semiconductor layer, perpendicular to one of the side surface of the groove, is a c-axis of Group III nitride semiconductor. A plane of the Group III nitride semiconductor, parallel to the main surface of the sapphire substrate, is an a-plane of Group III nitride semiconductor.
Claims6
A semiconductor substrate, comprising:
- a sapphire substrate including a c-plane main surface and comprising a groove in a surface thereof, the groove including side surfaces and a bottom surface;
- and
- a Group III nitride semiconductor layer formed on the sapphire substrate,
- wherein the side surfaces of the groove are an a-plane of sapphire,
- wherein an axis of the Group III nitride semiconductor layer, perpendicular to one of the side surfaces of the groove, is a c-axis of Group III nitride semiconductor, and
- wherein a plane of the Group III nitride semiconductor, parallel to the main surface of the sapphire substrate, is an a-plane of Group III nitride semiconductor.
Dependencies are inferred from the claim text.