Trench isolation structures and methods for bipolar junction transistors
AssigneeGlobalfoundries Inc.
InventorsRenata Camillo-Castillo, Marwan H. Khater
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Abstract
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation region is formed in a substrate to define a lateral boundary for an active device region and an intrinsic base layer is formed on the substrate. The intrinsic base layer has a section overlying the active device region. After the intrinsic base layer is formed, the first isolation region is partially removed adjacent to the active device region to define a trench that is coextensive with the substrate in the active device region and that is coextensive with the first isolation region. The trench is at least partially filled with a dielectric material to define a second isolation region.
Claims13
A device structure for a bipolar junction transistor formed using a substrate, the device structure comprising:
- a first isolation region defining a boundary of an active device region in the substrate;
- an intrinsic base on the active device region of the substrate;
- a collector in the active device region;
- an emitter coupled by the intrinsic base with the collector;
- and
- a second isolation region at least partially inside the first isolation region, the second isolation region being coextensive with a portion of the first isolation region, and the second isolation region being coextensive with a portion of the active device region,
- wherein the second isolation region is adjacent to the active device region, and the first isolation region includes a portion that separates the second isolation region from a portion of the substrate beneath the first isolation region.
A device structure for a bipolar junction transistor formed using a substrate, the device structure comprising:
- a first isolation region defining a boundary of an active device region in the substrate;
- an intrinsic base on the active device region;
- a collector in the active device region;
- an emitter coupled by the intrinsic base with the collector;
- a second isolation region at least partially inside the first isolation region, the second isolation region being coextensive with a portion of the first isolation region;
- and
- an air gap disposed between the second isolation region and the active device region of the substrate, the air gap coextensive with a portion of the intrinsic base, and the air gap is coextensive with a portion of the active device region,
- wherein the second isolation region is adjacent to the active device region, and the first isolation region includes a portion that separates the second isolation region from a portion of the substrate beneath the first isolation region.
Dependencies are inferred from the claim text.