Semiconductor device with a super junction structure having a vertical impurity distribution

A super junction semiconductor device, comprising:

• an impurity layer of a first conductivity type formed in a semiconductor portion having a first surface and a second surface parallel to the first surface;
• a super junction structure between the first surface and the impurity layer, the super junction structure comprising first columns of the first conductivity type and second columns of an opposite second conductivity type, wherein a sign of a compensation rate between the first and second columns changes along a vertical extension of the columns perpendicular to the first surface;
• a body zone of the second conductivity type formed between the first surface and one of the second columns at least partially in the vertical projection of the second columns;
• and
• at least one field extension zone of the first conductivity type directly adjoining the impurity layer and arranged in the vertical projection of at least one of the first and second columns, wherein an area impurity density in the field extension zone is between 1×1012 and 5×1012 cm−2, and a mean net impurity concentration in the field extension zone is higher than in a directly adjoining section of the second columns and lower than in the body zone.