Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a semiconductor layer provided on the semiconductor substrate, the semiconductor layer including:
• a first region including a first portion and a second portion, the second portion being arranged with the first portion in a first direction perpendicular to a stacking direction of the semiconductor substrate and the semiconductor layer;
• a second region provided in a surface of the first portion, the second region having a first conductivity type;
• a third region provided between the second portion and the second region in the surface of the first portion, the third region being adjacent to the second portion, the third region having a second conductivity type different from the first conductivity type;
• a source region provided in a surface of the second region, the source region having the second conductivity type;
• a drain region provided in a surface of the third region, the drain region having the second conductivity type;
• and
• an insulating part provided between the source region and the drain region in the surface of the third region, the insulating part being adjacent to the drain region;
• a control electrode formed astride between the source region and the insulating part on the semiconductor layer;
• a control insulating film provided between the control electrode and the semiconductor layer;
• a first electrode provided between the drain region and the second portion on the semiconductor layer;
• and
• a first insulating film provided between the semiconductor layer and the first electrode.

A semiconductor device comprising:

• a semiconductor substrate;
• a first region provided on the semiconductor substrate, the first region including a first portion and a second portion, the second portion being arranged with the first portion in a first direction perpendicular to a stacking direction of the semiconductor substrate and the first region, the first region having a first conductivity type;
• a second region provided in a surface of the first portion, the second region having a second conductivity type different from the first conductivity type;
• a third region provided between the second portion and the second region in the surface of the first portion, the third region being apart from the second region, the third region being adjacent to the second portion, the third region having the second conductivity type;
• a control insulating film provided on the first portion, the control insulating film being placed between the second region and the third region;
• a control electrode provided on the control insulating film;
• a first insulating film provided on the second portion, the first insulating film being adjacent to the third region;
• and
• a first electrode provided on the first insulating film.