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US 9,318,546 B1Granted
Doped electrode for DRAM capacitor stack
AssigneeIntermolecular, Inc.
InventorPrashant B. Phatak
Life of this patent
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Abstract
In some embodiments, a metal oxide second electrode material is formed as part of a MIM DRAM capacitor stack. The second electrode material is doped with one or more dopants. The dopants may influence the crystallinity, resistivity, and/or work function of the second electrode material. The dopants may be uniformly distributed throughout the second electrode material or may be distributed with a gradient in their concentration profile.
Claims19
A capacitor stack comprising:
- a first electrode layer formed above a substrate;
- a dielectric material formed above the first electrode layer;
- and
- a second electrode structure formed above the dielectric material;
- wherein the second electrode structure comprises a first material layer and a second material layer having a different composition than the first material layer,
- wherein the first material layer directly interfaces the dielectric material and comprises molybdenum oxide,
- wherein the first material layer further comprises a dopant having a concentration of between 1 atomic % and 20 atomic %,
- wherein the dopant comprises titanium oxide, and
- wherein the second material layer comprising titanium nitride.
6 more elements
Dependencies are inferred from the claim text.