Image sensor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Chin Huang, Tzu-Jui Wang, Szu-Ying Chen, Dun-Nian Yaung, Jen-Cheng Liu, Bruce C. S. Chou, Jung-Kuo Tu, Cheng-Chieh Hsieh
Life of this patent
Estimating the term…
Abstract
A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration. The heat sink may be a grid in either a single layer or in two layers, a zig-zag pattern, or in an interleaved fingers configuration.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a pixel within an image sensor;
- bonding the image sensor to a semiconductor device, the semiconductor device comprising a substrate and a heat sink at least partially located in a first metallization layer between the pixel and the substrate;
- and
- forming a thermal via extending through the image sensor and in thermal connection with the heat sink.
A method of manufacturing a semiconductor device, the method comprising:
- forming active devices on a first semiconductor substrate;
- forming a metallization layer and a heat sink over the active devices, wherein the heat sink and the metallization layer are located an equal distance away from the first semiconductor substrate;
- forming a pixel within a second semiconductor substrate;
- bonding the second semiconductor substrate over the first semiconductor substrate;
- after the bonding forming thermal vias through the second semiconductor substrate, wherein the thermal vias are in thermal connection with the heat sink.
A method of manufacturing a semiconductor device, the method comprising:
- forming a heat sink and forming a first portion of a thermal via over a semiconductor substrate, wherein the forming the heat sink and the forming the first portion of the thermal via are performed at the same time;
- forming a second portion of the thermal via over an image sensor substrate;
- and
- bonding the image sensor substrate over the semiconductor substrate, wherein after the bonding the first portion of the thermal via is in thermal contact with the second portion of the thermal via.
Dependencies are inferred from the claim text.