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US 9,318,523 B2Granted
Solid-state imaging device
AssigneeSony Corporation
InventorKazuichiro Itonaga
Life of this patent
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Abstract
A solid-state imaging device that includes a pixel including a photoelectric conversion section, and a conversion section that converts an electric charge generated by photoelectric conversion into a pixel signal. In the solid-state imaging device, substantially only a gate insulation film is formed on a substrate corresponding to an area under a gate electrode of at least one transistor in the pixel.
Claims10
A solid-state imaging device comprising:
- a substrate;
- a photoelectric conversion section disposed in the substrate;
- an element isolation region disposed adjacent to the photoelectric conversion section;
- a floating diffusion electrically connected to the photoelectric conversion section;
- an amplification transistor having a gate electrode and an active region;
- and
- a contact section disposed on the gate electrode of the amplification transistor and disposed directly above the active region of the amplification transistor,
- wherein,
- the floating diffusion is electrically connected to the gate electrode of the amplification transistor via the contact section,
- a width of the gate electrode of the amplification transistor is larger than a width of the active region of the amplification transistor.
7 more elements
Dependencies are inferred from the claim text.