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US 9,318,521 B2Granted
Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorHisanori Ihara
Life of this patent
Estimating the term…
Abstract
An image sensor includes a first sub-gate in a recessed region in a substrate; a second sub-gate on the first sub-gate in contact with an upper surface of the substrate; and an element isolation region in the substrate spaced apart from the first sub-gate. A lower surface of the second sub-gate is wider than an upper surface of the first sub-gate, and a portion of the element isolation region is spaced apart from the second sub-gate by a first distance in a first direction.
Claims8
An image sensor comprising:
- a first sub-gate in a recessed region in a substrate;
- a second sub-gate on the first sub-gate in contact with an upper surface of the substrate;
- an element isolation region in the substrate spaced apart from the first sub-gate;
- and
- a floating diffusion region positioned between the first sub-gate and the element isolation region in a second direction that lies in a plane that is parallel to the plane of the substrate on a first side of the second sub-gate,
- wherein a lower surface of the second sub-gate is wider than an upper surface of the first sub-gate, and wherein a portion of the element isolation region is spaced apart from the second sub-gate on a second side of the second sub-gate by a first distance in a first direction that lies in a plane that is parallel to the plane of the substrate and is perpendicular to the second direction in a plan view, wherein the second side of the second sub-gate is different than the first side of the second sub-gate and the second side of the second sub-gate is perpendicular to the first side of the second sub-gate, and
- wherein the floating diffusion region is spaced apart from the first sub-gate on the first side of the second sub-gate in the second direction different than the first direction and, in the plan view, a width of the portion of the element isolation region extending in the second direction is between a width of the second sub-gate in the second direction and a width of the first sub-gate in the second direction.
4 more elements
An image sensor comprising:
- a first sub-gate in a recessed region of a substrate;
- a second sub-gate on the first sub-gate;
- an element isolation region in the substrate, a portion of the element isolation region being spaced apart from the first sub-gate in a first horizontal direction;
- an active region positioned between the element isolation region and the first sub-gate;
- and
- a floating diffusion region positioned between the first sub-gate and the element isolation region in a second direction that lies in a plane that is parallel to the plane of the substrate on a first side of the second sub-gate,
- wherein a lower surface of the second sub-gate is wider than an upper surface of the first sub-gate, and wherein a portion of the element isolation region is spaced apart from the second sub-gate on a second side of the second sub-gate in the first direction, the active region extending in the first horizontal direction beyond the second sub-gate, and
- wherein the floating diffusion region is spaced apart from the first sub-gate on the first side of the second sub-gate in the second direction different than the first horizontal direction that lies in a plane that is parallel to the plane of the substrate and is perpendicular to the second direction in a plan view, wherein the second side of the second sub-gate is different than the first side of the second sub-gate and the second side of the second sub-gate is perpendicular to the first side of the second sub-gate, and wherein, in the plan view, a width of the portion of the element isolation region in the second direction is between a width of the second sub-gate in the second direction and a width of the first sub-gate in the second direction.
5 more elements
Dependencies are inferred from the claim text.