Solid-state image sensing device manufacturing method and solid-state image sensing device
AssigneeKabushiki Kaisha Toshiba
InventorOsamu Fujii
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Abstract
According to one embodiment, a solid-state image sensing device manufacturing method includes forming a photoelectric converting element, a diffusion layer included in a floating diffusion, and a read transistor, in a photoelectric converting element formation region of a semiconductor substrate, a floating diffusion formation region, and a read transistor formation region located between the photoelectric converting element formation region and the floating diffusion formation region, respectively, and forming a semiconductor layer including a impurity on the diffusion layer on the semiconductor substrate.
Claims5
A solid-state image sensing device comprising:
- a photoelectric converting element which is provided in a semiconductor substrate and which converts incident light to a charge;
- a floating diffusion which is provided in the semiconductor substrate and to which the charge is transferred;
- and
- a read transistor which is provided between the floating diffusion and the photoelectric converting element in the semiconductor substrate and which controls the transfer of the charge, wherein
- the floating diffusion includes a metal impurity,
- the floating diffusion includes a diffusion layer provided in the semiconductor substrate, a first semiconductor layer which is provided on the diffusion layer and which includes a first impurity, and an impurity region which is provided in the diffusion layer and which includes the metal impurity, the impurity region abutting on the bottom of the first semiconductor layer,
- the concentration of the metal impurity in the floating diffusion is higher than the concentration of a metal impurity in the photoelectric converting element, and
- the concentration of the metal impurity in the impurity region is equal to or less than the concentration of the metal impurity in the first semiconductor layer and is equal to or more than the concentration of the metal impurity in the diffusion layer.
Dependencies are inferred from the claim text.