Back to results
US 9,318,516 B2Granted
High-frequency optoelectronic detector, system and method
AssigneeSTMicroelectronics S.r.l.
InventorAlberto Pagani
Life of this patent
Estimating the term…
Abstract
An optoelectronic device for detecting electromagnetic radiation and including: a body of semiconductor material delimited by a main surface and including a first region and a second region that form a junction; and a recess formed in the body, which extends from the main surface and is delimited at least by a first wall, the first wall being arranged transverse to the main surface. The junction faces the first wall.
Claims17
An optoelectronic device, comprising:
- a body of semiconductor material, the body including a first main surface;
- a first region formed in the body;
- a second region formed within the first region, wherein the first and second regions are of opposite conductivity types to form a junction between the first and second regions and a depletion region at the junction;
- a recess extending from the first main surface of the body through the second region and into the first region to intersect the depletion region at a sidewall of the recess;
- a top layer formed over the first main surface that includes a portion formed in the recess, the top layer having an index of refraction that is greater than an index of refraction of the body and being operable to expose the intersected depletion region at said sidewall to electromagnetic radiation propagating through the top layer;
- wherein the recess includes a first side wall having a first angle relative to the first main surface of the body, said first angle being between, but not equal to either of, zero and ninety degrees.
3 more elements
An optoelectronic device comprising:
- a body of semiconductor material, the body including a first main surface;
- a first region formed in the body;
- a second region formed within the first region, wherein the first and second regions are of opposite conductivity types to form a junction between the first and second regions and a depletion region at the junction;
- a recess extending from the first main surface of the body through the second region and into the first region to intersect the depletion region at a sidewall of the recess, wherein said recess is configured to expose the intersected depletion region at said sidewall to electromagnetic radiation;
- wherein the recess includes a first side wall having a first angle relative to the first main surface of the body, said first angle being between, but not equal to either of, zero and ninety degrees;
- a third region formed within the second region;
- and
- wherein the first region corresponds to a collector, the second region corresponds to a base, and the third region corresponds to an emitter of a bipolar junction transistor.
5 more elements
An optoelectronic device comprising:
- a body of semiconductor material, the body including a first main surface;
- a first region formed in the body;
- a second region formed within the first region, wherein the first and second regions are of opposite conductivity types to form a junction between the first and second regions and a depletion region at the junction;
- a recess extending from the first main surface of the body through the second region and into the first region to intersect the depletion region at a sidewall of the recess, wherein said recess is configured to expose the intersected depletion region at said sidewall to electromagnetic radiation;
- wherein the recess includes a first side wall having a first angle relative to the first main surface of the body, said first angle being between, but not equal to either of, zero and ninety degrees;
- a third region formed within the first region;
- and
- wherein the first region corresponds to a body, the second region corresponds to a drain, and the third region corresponds to a source of a MOS transistor.
5 more elements
An optoelectronic device, comprising:
- a body of semiconductor material, the body including a first main surface;
- a first region having a first conductivity type formed in the body;
- a second region of intrinsic material formed within the first region;
- a third region having a second conductivity type opposite the first conductivity type formed within the second region to form a junction between the first, second and third regions and a depletion region at the junction;
- a recess extending from the first main surface of the body through the second and third regions and into the first region to intersect the depletion region in the recess;
- a top layer formed over the first main surface that includes a portion formed in the recess, the top layer having an index of refraction that is greater than an index of refraction of the body and being operable to expose the intersected depletion region to electromagnetic radiation propagating through the top layer;
- wherein the recess includes a first side wall having a first angle relative to the first main surface of the body, said first angle being between, but not equal to either of, zero and ninety degrees.
4 more elements
An optoelectronic device comprising:
- a body of semiconductor material, the body including a first main surface;
- a first region having a first conductivity type formed in the body;
- a second region of intrinsic material formed within the first region;
- a third region having a second conductivity type opposite the first conductivity type formed within the second region to form a junction between the first, second and third regions and a depletion region at the junction;
- a recess extending from the first main surface of the body through the second and third regions and into the first region to intersect the depletion region in the recess for exposure of the intersected depletion region to electromagnetic radiation;
- wherein the recess includes a first side wall having a first angle relative to the first main surface of the body, said first angle being between, but not equal to either of, zero and ninety degrees;
- and
- a top layer formed over the first main surface that includes a portion formed in the recess, the top layer having an index of refraction that is greater than an index of refraction of the body and being operable to enable electromagnetic radiation in the form of an optical signal to propagate through the top layer to the depletion region.
5 more elements
An optoelectronic device, comprising:
- a body of semiconductor material, the body including a first main surface;
- a first region having a first conductivity type formed in the body;
- a second region of intrinsic material formed within the first region;
- a third region having a second conductivity type opposite the first conductivity type formed within the second region to form a junction between the first, second and third regions and a depletion region at the junction;
- a recess extending from the first main surface of the body through the second and third regions and into the first region to intersect the depletion region in the recess for exposure of the intersected depletion region to electromagnetic radiation;
- wherein the recess includes a first side wall having a first angle relative to the first main surface of the body, said first angle being between, but not equal to either of, zero and ninety degrees;
- wherein the recess has a second side wall extending from the first main surface into the first region;
- wherein a first anti-reflection layer is formed on the first side wall and a second anti-reflection layer is formed on the second side wall;
- wherein a first coating layer is formed on a portion of the first main surface;
- wherein a top layer is formed on the first coating layer and includes a portion formed in the recess on the first and second anti-reflection layers;
- wherein the portion of the top layer has a third side wall that is parallel to the first side wall;
- wherein the portion of the top layer has a fourth side wall that is parallel to the first main surface;
- and
- wherein a second coating layer is formed on the top layer and on the portion of the first main surface on which the first coating layer is not formed.
11 more elements
An integrated circuit, comprising:
- an optoelectronic device including,
- a body of semiconductor material, the body including a first main surface;
- a first region formed in the body;
- a second region formed within the first region, wherein the first and second regions are of opposite conductivity types to form a junction between the first and second regions and a depletion region at the junction;
- a recess extending from the first main surface of the body through the second region and into the first region to intersect the depletion region in the recess;
- and
- a light guide extending over the first main surface and into said recess, said light guide configured to direct an optical signal onto said intersected depletion region;
- wherein the recess includes a first side wall having a first angle relative to the first main surface of the body, said first angle being between, but not equal to either of, zero and ninety degrees.
5 more elements
Dependencies are inferred from the claim text.