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US 9,318,510 B2Granted
Metal wire, thin-film transistor substrate and method for manufacturing a thin-film transistor substrate
AssigneeSamsung Display Co., Ltd.
InventorsKyung-Seop Kim, Byeong-Beom Kim, Sang-Won Shin, Dae-Young Lee, Chang-Oh Jeong, Joon-Yong Park, Dong-Min Lee
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Abstract
A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.
Claims14
A metal wire included in a display device, the metal wire comprising:
- a first metal layer including a nickel-chromium alloy;
- a first transparent oxide layer disposed on the first metal layer;
- a second metal layer disposed on the first transparent oxide layer, and
- a second transparent oxide layer disposed on the second metal layer.
1 more element
A thin-film transistor substrate comprising:
- a base substrate;
- a gate pattern on the base substrate, the gate pattern including a gate line, and a gate electrode coupled to the gate line;
- a semiconductor pattern on the gate electrode;
- and
- a source pattern including a data line crossing the gate line, a source electrode overlapping the semiconductor pattern and coupled to the data line, and a drain electrode overlapping the semiconductor pattern and spaced apart from the source electrode,
- wherein at least one of the gate pattern and the source pattern includes:
- a first metal layer including a nickel-chromium alloy;
- a first transparent oxide layer disposed on the first metal layer;
- a second metal layer disposed on the first transparent oxide layer, and
- a second transparent oxide layer disposed on the second metal layer.
7 more elements
Dependencies are inferred from the claim text.